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| Utilizing our Hi-K dielectric material (K=16,000), the IRC combines both a capacitor and a resistor in a single chip package.
This innovative arrangement reduces component count, resulting in a more efficient assembly process.
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Integrated Design Benefits
- Reduce component count
- TCC=X7S(±22%) TCR=M2H（-100±50ppm/℃）
- High working voltages（50V～100V）
- Solderable Pt/Au Terminations
Specs
| PARAMETER |
SPECIFICATION |
| Available Chip Sizes (L x W x t) |
25 x 25 x 10mils to 40 x 35 x 10mils |
| Nominal Dielectric Constant |
16,000 |
| Electrode Design |
With Border (A-type) |
| Metallization |
Top: TaN / TiW / Au |
| Bottom: Ti / Pt / Au |
| Nominal Capacitance |
220pF to 680pF (@ +25℃ & 1kHz) |
| Capacitance Tolerance |
M = ±20% |
| Z = -20% / +80% |
| V = -0% / +100% |
| TC of Capacitance (TCC) |
±22% @ -55℃ to +125℃ |
| Dissipation Factor (DF) |
<4％ (@ +25℃ & 1kHz) |
| Insulation Resistance (IR) |
>1010Ω (@ +25℃) |
| Dielectric Withstanding Voltage (DWV) |
RWV x 2.5 (minimum DWV @ +25℃) |
| Capacitor Rated Working Voltage (RWV) |
100V |
| Nominal Resistance |
50Ω, 100Ω, 200Ω |
| Resistance Tolerance |
K = ±10% |
| M = ±20% |
| TC of Resistance (TCR) |
-100 ± 50ppm / ℃ @ -55℃ to +125℃ |
| Resistor Rated Power |
100mW |
Selection Guide
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